ADVANCED NANOMATERIALS FOR SEMICONDUCTOR DEVICES

This chapter presents a comprehensive overview of advanced nanomaterials and their transformative role in next-generation semiconductor and optoelectronic devices. It explores the unique properties and integration strategies of emerging materials such as graphene, transition metal dichalcogenides (TMDs), black phosphorus, MXenes, and quantum dots (QDs), which have collectively redefined the boundaries of nanoscale electronics. The discussion begins with two-dimensional (2D) materials, emphasising their exceptional electrical, mechanical, and optical characteristics, and examines how bandgap engineering and heterostructuring overcome intrinsic limitations for high-performance transistor applications. The chapter further elaborates on the role of QDs in realising quantum confinement effects for advanced transistors, photodetectors, light-emitting diodes, and photovoltaic systems, as well as in hybrid architectures that enhance charge transport and light–matter interaction. Advanced lithography and nanofabrication techniques, including EUV, EBL, NIL and DSA, are reviewed as key enablers of sub-10 nm device scaling. Finally, the chapter highlights the intersection of nanotechnology and optoelectronics, where engineered nanostructures such as QDs, nanowires, and 2D materials underpin the development of compact, flexible, and high-efficiency nano-optoelectronic systems. Together, these insights outline the critical advancements driving the evolution of semiconductor technologies beyond the silicon era.